{"product_id":"irfp450","title":"IRFP450","description":"\u003ch5 data-start=\"509\" data-end=\"819\"\u003eThe \u003cstrong data-start=\"513\" data-end=\"547\"\u003eIRFP450 N-Channel Power MOSFET\u003c\/strong\u003e is a high-voltage, high-current semiconductor device designed for demanding power switching applications. Built using \u003cstrong data-start=\"666\" data-end=\"713\"\u003eadvanced third-generation MOSFET technology\u003c\/strong\u003e, it delivers a strong balance of \u003cstrong data-start=\"747\" data-end=\"818\"\u003efast switching speed, low conduction losses, and rugged performance\u003c\/strong\u003e.\u003c\/h5\u003e\n\u003ch5 data-start=\"821\" data-end=\"1141\"\u003eWith a \u003cstrong data-start=\"828\" data-end=\"867\"\u003edrain-source voltage rating of 500V\u003c\/strong\u003e and a \u003cstrong data-start=\"874\" data-end=\"926\"\u003econtinuous drain current capability of up to 14A\u003c\/strong\u003e, the IRFP450 is well-suited for industrial and commercial power electronics. Its \u003cstrong data-start=\"1008\" data-end=\"1035\"\u003elow on-state resistance\u003c\/strong\u003e helps minimize power loss and heat generation, making it efficient for high-frequency switching circuits.\u003c\/h5\u003e\n\u003ch5 data-start=\"1143\" data-end=\"1505\"\u003eHoused in a \u003cstrong data-start=\"1155\" data-end=\"1173\"\u003eTO-247 package\u003c\/strong\u003e, this MOSFET supports higher power dissipation and provides improved electrical isolation through its \u003cstrong data-start=\"1276\" data-end=\"1302\"\u003eisolated mounting hole\u003c\/strong\u003e, ensuring better safety and mechanical reliability. The device also features \u003cstrong data-start=\"1380\" data-end=\"1415\"\u003erepetitive avalanche capability\u003c\/strong\u003e and a strong \u003cstrong data-start=\"1429\" data-end=\"1453\"\u003edynamic dV\/dt rating\u003c\/strong\u003e, making it suitable for harsh operating conditions.\u003c\/h5\u003e\n\u003ch5 data-start=\"1507\" data-end=\"1693\"\u003eThe IRFP450 can be driven directly from logic or driver ICs due to its \u003cstrong data-start=\"1578\" data-end=\"1612\"\u003esimple gate drive requirements\u003c\/strong\u003e, making it easy to integrate into both new designs and replacement applications.\u003c\/h5\u003e\n\u003chr data-start=\"1695\" data-end=\"1698\"\u003e\n\u003ch5 data-start=\"1700\" data-end=\"1726\"\u003eKey Features \u0026amp; Benefits\u003c\/h5\u003e\n\u003cul data-start=\"1728\" data-end=\"2167\"\u003e\n\u003cli data-start=\"1728\" data-end=\"1771\"\u003e\n\u003ch5 data-start=\"1730\" data-end=\"1771\"\u003eN-Channel enhancement mode power MOSFET\u003c\/h5\u003e\n\u003c\/li\u003e\n\u003cli data-start=\"1772\" data-end=\"1814\"\u003e\n\u003ch5 data-start=\"1774\" data-end=\"1814\"\u003eHigh voltage capability up to \u003cstrong data-start=\"1804\" data-end=\"1812\"\u003e500V\u003c\/strong\u003e\n\u003c\/h5\u003e\n\u003c\/li\u003e\n\u003cli data-start=\"1815\" data-end=\"1857\"\u003e\n\u003ch5 data-start=\"1817\" data-end=\"1857\"\u003eContinuous drain current up to \u003cstrong data-start=\"1848\" data-end=\"1855\"\u003e14A\u003c\/strong\u003e\n\u003c\/h5\u003e\n\u003c\/li\u003e\n\u003cli data-start=\"1858\" data-end=\"1906\"\u003e\n\u003ch5 data-start=\"1860\" data-end=\"1906\"\u003e\n\u003cstrong data-start=\"1860\" data-end=\"1881\"\u003eLow on-resistance\u003c\/strong\u003e for reduced power loss\u003c\/h5\u003e\n\u003c\/li\u003e\n\u003cli data-start=\"1907\" data-end=\"1941\"\u003e\n\u003ch5 data-start=\"1909\" data-end=\"1941\"\u003e\u003cstrong data-start=\"1909\" data-end=\"1939\"\u003eFast switching performance\u003c\/strong\u003e\u003c\/h5\u003e\n\u003c\/li\u003e\n\u003cli data-start=\"1942\" data-end=\"1988\"\u003e\n\u003ch5 data-start=\"1944\" data-end=\"1988\"\u003eRepetitive avalanche rated for reliability\u003c\/h5\u003e\n\u003c\/li\u003e\n\u003cli data-start=\"1989\" data-end=\"2022\"\u003e\n\u003ch5 data-start=\"1991\" data-end=\"2022\"\u003eHigh dynamic dV\/dt capability\u003c\/h5\u003e\n\u003c\/li\u003e\n\u003cli data-start=\"2023\" data-end=\"2066\"\u003e\n\u003ch5 data-start=\"2025\" data-end=\"2066\"\u003eEasy paralleling for high-power designs\u003c\/h5\u003e\n\u003c\/li\u003e\n\u003cli data-start=\"2067\" data-end=\"2109\"\u003e\n\u003ch5 data-start=\"2069\" data-end=\"2109\"\u003eSimple and low gate drive requirements\u003c\/h5\u003e\n\u003c\/li\u003e\n\u003cli data-start=\"2110\" data-end=\"2167\"\u003e\n\u003ch5 data-start=\"2112\" data-end=\"2167\"\u003eRobust \u003cstrong data-start=\"2119\" data-end=\"2137\"\u003eTO-247 package\u003c\/strong\u003e with isolated mounting hole\u003cbr\u003e\n\u003c\/h5\u003e\n\u003ctable\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth\u003e\n\u003ch5\u003eParameter\u003c\/h5\u003e\n\u003c\/th\u003e\n\u003cth\u003e\n\u003ch5\u003eValue\u003c\/h5\u003e\n\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003e\n\u003ch5\u003eMOSFET Type\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\n\u003ch5\u003eN-Channel Power MOSFET\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\n\u003ch5\u003eDrain-Source Voltage (Vds)\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\n\u003ch5\u003e500V\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\n\u003ch5\u003eContinuous Drain Current (Id)\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\n\u003ch5\u003e14A\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\n\u003ch5\u003eOn-Resistance (Rds(on))\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\n\u003ch5\u003e~0.013 Ω\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\n\u003ch5\u003eGate-Source Voltage (Vgs)\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\n\u003ch5\u003e±20V\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\n\u003ch5\u003eGate Charge\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\n\u003ch5\u003e~87 nC\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\n\u003ch5\u003eSwitching Speed\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\n\u003ch5\u003e~100 ns\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\n\u003ch5\u003eOperating Mode\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\n\u003ch5\u003eEnhancement Mode\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\n\u003ch5\u003eJunction Temperature (Rated)\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\n\u003ch5\u003e150°C\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\n\u003ch5\u003eMax Junction Temperature\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\n\u003ch5\u003e175°C\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\n\u003ch5\u003ePackage Type\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\n\u003ch5\u003eTO-247\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003e\n\u003ch5\u003eMounting\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003ctd\u003e\n\u003ch5\u003eThrough-Hole, Isolated Hole\u003c\/h5\u003e\n\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003cbr\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e","brand":"In-tech Driven","offers":[{"title":"Default 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