IRFP450

The IRFP450 N-Channel Power MOSFET is a high-voltage, high-current semiconductor device designed for demanding power switching applications. Built using advanced third-generation MOSFET technology, it delivers a strong balance of fast switching speed, low conduction losses, and rugged performance.

With a drain-source voltage rating of 500V and a continuous drain current capability of up to 14A, the IRFP450 is well-suited for industrial and commercial power electronics. Its low on-state resistance helps minimize power loss and heat generation, making it efficient for high-frequency switching circuits.

Housed in a TO-247 package, this MOSFET supports higher power dissipation and provides improved electrical isolation through its isolated mounting hole, ensuring better safety and mechanical reliability. The device also features repetitive avalanche capability and a strong dynamic dV/dt rating, making it suitable for harsh operating conditions.

The IRFP450 can be driven directly from logic or driver ICs due to its simple gate drive requirements, making it easy to integrate into both new designs and replacement applications.

Key Features & Benefits

• N-Channel enhancement mode power MOSFET

• High voltage capability up to 500V

• Continuous drain current up to 14A

• Low on-resistance for reduced power loss

• Fast switching performance

• Repetitive avalanche rated for reliability

• High dynamic dV/dt capability

• Easy paralleling for high-power designs

• Simple and low gate drive requirements

• Robust TO-247 package with isolated mounting hole
  

  Parameter	Value
  MOSFET Type	N-Channel Power MOSFET
  Drain-Source Voltage (Vds)	500V
  Continuous Drain Current (Id)	14A
  On-Resistance (Rds(on))	~0.013 Ω
  Gate-Source Voltage (Vgs)	±20V
  Gate Charge	~87 nC
  Switching Speed	~100 ns
  Operating Mode	Enhancement Mode
  Junction Temperature (Rated)	150°C
  Max Junction Temperature	175°C
  Package Type	TO-247
  Mounting	Through-Hole, Isolated Hole