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NCEP85T16
Rs.160.00
The NCEP85T16 N-Channel Power MOSFET is a high-performance power transistor engineered for high-current and high-frequency switching applications. Built using advanced Super Trench technology, this MOSFET delivers exceptionally low RDS(on) and optimized gate charge, resulting in minimal conduction and switching losses.
With a drain-source voltage rating of 85V and a continuous drain current capability of up to 160A, the NCEP85T16 is ideal for demanding power electronics designs. Its robust TO-220 package allows efficient heat dissipation, making it suitable for industrial, inverter, and DC-DC converter applications.
Designed to operate reliably up to 175°C junction temperature, this MOSFET is 100% UIS and ΔVds tested, ensuring durability and long-term stability in harsh electrical environments. Whether you are designing power inverters, motor drivers, synchronous rectifiers, or SMPS circuits, the NCEP85T16 offers excellent efficiency and performance.
🔹 Key Features
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N-Channel Power MOSFET with Super Trench Technology
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Ultra-low RDS(on) ≤ 3.8mΩ @ VGS = 10V
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High current handling up to 160A
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Optimized gate charge for fast switching
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High-frequency switching capability
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Wide operating temperature range -55°C to 175°C
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Pb-free and RoHS compliant
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100% UIS & ΔVds tested for reliability
🔹 Applications
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DC-DC Converters
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Power Inverters (Solar & UPS)
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Synchronous Rectification
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Motor Control Circuits
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SMPS & Power Supplies
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Industrial Power Electronics
🔹 Technical Specifications Table
Parameter
Value
Part Number
NCEP85T16
Transistor Type
Power MOSFET
Channel Type
N-Channel
Drain-Source Voltage (VDS)
85V
Continuous Drain Current (ID)
160A
Pulsed Drain Current (IDM)
480A
Power Dissipation (PD)
220W
RDS(on)
≤ 0.0038Ω
Gate-Source Voltage (VGS)
±20V
Gate Threshold Voltage
≤ 4.5V
Total Gate Charge (Qg)
105nC
Rise Time
29ns
Drain-Source Capacitance
1520pF
Junction Temperature
175°C
Package Type
TO-220-3L
🔹 Package Information
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Package: TO-220-3L
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Mounting: Through Hole
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Suitable for heatsink installation
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